HN1C01FU-GR,LXHF

Toshiba
757-HN1C01FU-GRLXHF

HN1C01FU-GR,LXHF

Mfr.:

Description:
Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6)

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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In Stock: 5,755

Stock:

5,755 Can Ship Immediately

Factory Lead-Time:

54 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--
Full Reel (Order in multiples of 3000)
Cut Tape
MouseReel™ (+$7.00)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.40 $0.40
$0.34 $3.40
$0.237 $23.70
$0.185 $92.50
$0.15 $150.00
Full Reel (Order in multiples of 3000)
$0.127 $381.00
$0.118 $1,062.00
$0.115 $2,760.00
$0.112 $5,040.00
† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.
Product Attribute Attribute Value
Toshiba
Product Category: Bipolar Transistors - BJT
RoHS:  Details
SMD/SMT
US-6
NPN
Dual
50 V
60 V
5 V
100 mV
200 mW
80 MHz
+ 125 C
AEC-Q200
Reel
Cut Tape
MouseReel
Brand: Toshiba
Continuous Collector Current: 150 mA
DC Collector/Base Gain hfe Min: 120 at 2 mA, 6 V
DC Current Gain hFE Max: 400 at 2 mA, 6 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: Si
Part # Aliases: HN1C01FU-GR,LXHF(B
USHTS:
8541210095
CAHTS:
8541210000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

HN1x Bipolar Transistors

Toshiba HN1x Bipolar Transistors are AEC-Q101 qualified and optimized for low-frequency amplifier applications. The HN1x Bipolar Transistors feature high voltage, high collector current, and an excellent hFE linearity. The devices are offered in a small SOT-363 (US6) package.

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Toshiba HN1A01FU-Y,LXHF
AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)