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STPSC10H065DI

Name: STMicroelectronics STPSC10H065DI
Brand: STMicroelectronics
SKU: 511-STPSC10H065DI
Price: 4.5 USD
Availability: InStock

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Mouser #:

511-STPSC10H065DI

Mfr. #:

STPSC10H065DI

Description:

Schottky Diodes & Rectifiers 650V Pwr Schottky Silicn Carbide Diode

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Datasheet:

STPSC10H065DI Datasheet (PDF)

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In Stock: 699

Stock:: 699 Can Ship Immediately

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Factory Lead-Time:: 57 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.50	$4.50
	$4.04	$40.40
	$3.31	$331.00
	$3.22	$805.00
	$2.82	$1,410.00
	$2.38	$2,380.00
	$2.29	$4,580.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Schottky Diodes & Rectifiers
RoHS:	Details
Product:	Schottky Silicon Carbide Diodes
Mounting Style:	Through Hole
Package / Case:	TO-220AC-2
Configuration:	Single
Technology:	SiC
If - Forward Current:	22 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.98 V
Ifsm - Forward Surge Current:	90 A
Ir - Reverse Current:	85 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	STPSC10H065
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	Schottky Diodes & Rectifiers
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Unit Weight:	0.081130 oz

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Documents (4)

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STPSC10H065DI Datasheet (PDF)

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Product Compliance

USHTS:: 8541100080
CNHTS:: 8541100000
CAHTS:: 8541100090
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are an ultra high performance power Schottky diode. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These devices are especially suited for use in PFC applications and they will boost the performance in hard switching conditions. High forward surge capability ensures a good robustness during transient phases.

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