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SCS220AE2GC11

Name: ROHM Semiconductor SCS220AE2GC11
Brand: ROHM Semiconductor
SKU: 755-SCS220AE2GC11
Price: 9.04 USD
Availability: InStock

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Mouser #:

755-SCS220AE2GC11

Mfr. #:

SCS220AE2GC11

Description:

Schottky Diodes & Rectifiers 650V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

SCS220AE2GC11 Datasheet

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In Stock: 145

Stock:: 145

Can Ship Immediately

Shipping Restricted
On Order:: 900

Expected 18-Apr-24
Factory Lead-Time:: 38

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Minimum: 1 Multiples: 1

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$9.04	$9.04
	$7.75	$77.50
	$6.45	$774.00
	$5.70	$1,539.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Schottky Diodes & Rectifiers
RoHS:	Details
Product:	Schottky Silicon Carbide Diodes
Mounting Style:	Through Hole
Package / Case:	TO-247N-3
Configuration:	Single
Technology:	SiC
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.55 V
Ifsm - Forward Surge Current:	300 A
Ir - Reverse Current:	200 uA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	160 W
Product Type:	Schottky Diodes & Rectifiers
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Part # Aliases:	SCS220AE2

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Product Compliance

USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

SiC Schottky Barrier Diodes

ROHM Semiconductor^® SiC (Silicon Carbide) Schottky Barrier Diodes feature low total capacitive (Q_c) that reduces switching loss, enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. This makes them ideal Ideal for use as key devices in a variety of applications, including inverters and chargers for EV and solar power conditioners.

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