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SCS205KGC17

Name: ROHM Semiconductor SCS205KGC17
Brand: ROHM Semiconductor
SKU: 755-SCS205KGC17
Price: 5.76 USD
Availability: InStock

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Mouser #:

755-SCS205KGC17

Mfr. #:

SCS205KGC17

Description:

Schottky Diodes & Rectifiers SILICON CARBIDE

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

SCS205KGC17 Datasheet

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In Stock: 131

Stock:: 131

Can Ship Immediately

Shipping Restricted
On Order:: 3,000
Factory Lead-Time:: 56

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.76	$5.76
	$4.84	$48.40
	$3.91	$391.00
	$3.48	$1,740.00
	$2.91	$2,910.00
	$2.81	$7,025.00
5,000	Quote

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Schottky Diodes & Rectifiers
RoHS:	Details
Product:	Schottky Silicon Carbide Diodes
Mounting Style:	Through Hole
Package / Case:	TO-220ACG-2
Configuration:	Single
Technology:	SiC
If - Forward Current:	5 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.4 V
Ifsm - Forward Surge Current:	23 A
Ir - Reverse Current:	5 uA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	88 W
Product Type:	Schottky Diodes & Rectifiers
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kVDC
Part # Aliases:	SCS205KG

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Product Compliance

USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

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