RGW50TK65DGVC11

ROHM Semiconductor
755-RGW50TK65DGVC11

RGW50TK65DGVC11

Mfr.:

Description:
IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT

ECAD Model:
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In Stock: 448

Stock:

448 Can Ship Immediately

Factory Lead-Time:

30 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$6.13 $6.13
$5.15 $51.50
$4.99 $149.70
$4.16 $499.20
$4.03 $1,088.10
$3.70 $1,887.00
$2.98 $3,039.60
Product Attribute Attribute Value
ROHM Semiconductor
Product Category: IGBT Transistors
RoHS:  Details
Si
TO-3PFM-3
Through Hole
Single
650 V
1.9 V
- 30 V, 30 V
30 A
67 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Continuous Collector Current Ic Max: 18 A
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Part # Aliases: RGW50TK65D
USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

RGW 650V Field Stop Trench IGBTs

ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.