RGTV80TK65GVC11

ROHM Semiconductor
755-RGTV80TK65GVC11

RGTV80TK65GVC11

Mfr.:

Description:
IGBT Transistors 2us Short-Circuit Tolerance, 650V 23A, TO-3PFM, Field Stop Trench IGBT

ECAD Model:
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In Stock: 450

Stock:

450 Can Ship Immediately

Factory Lead-Time:

30 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$6.07 $6.07
$5.10 $51.00
$4.94 $148.20
$4.12 $494.40
$3.99 $1,077.30
$3.66 $1,866.60
$2.95 $3,009.00
Product Attribute Attribute Value
ROHM Semiconductor
Product Category: IGBT Transistors
RoHS:  Details
Si
TO-3PFM-3
Through Hole
Single
650 V
1.9 V
- 30 V, 30 V
39 A
85 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Continuous Collector Current Ic Max: 23 A
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Part # Aliases: RGTV80TK65
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USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

RGTV 650V Field Stop Trench IGBTs

ROHM Semiconductor RGTV 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGTV IGBTs feature high-speed switching, low switching loss, and a short circuit withstand time 2μs. The ROHM RGTV 650V Field Stop Trench IGBTs are ideal for Solar Inverter, UPS, Welding, IH, and PFC applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.