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R6520KNX3C16

Name: ROHM Semiconductor R6520KNX3C16
Brand: ROHM Semiconductor
SKU: 755-R6520KNX3C16
Price: 4.35 USD
Availability: InStock

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Mouser #:

755-R6520KNX3C16

Mfr. #:

R6520KNX3C16

Description:

MOSFET 650V 20A, TO-220AB, High-speed switching Power MOSFET

Datasheet:

R6520KNX3C16 Datasheet

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In Stock: 900

Stock:: 900 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.35	$4.35
	$3.66	$36.60
	$3.54	$177.00
	$2.95	$295.00
	$2.86	$715.00
	$2.62	$1,310.00
	$2.11	$2,110.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	205 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	220 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	30 ns
Product Type:	MOSFET
Rise Time:	50 ns
Factory Pack Quantity:	50
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	75 ns
Typical Turn-On Delay Time:	30 ns
Part # Aliases:	R6520KNX3

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
ECCN:: EAR99

ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. The devices' high-speed switching combined with an internal diode with high Reverse Recovery Time (t_rr) characteristics optimize efficiency and lower loss while contributing to smaller designs.

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