R6020ENXC7G

ROHM Semiconductor
755-R6020ENXC7G

R6020ENXC7G

Mfr.:

Description:
MOSFET 600V POWER MOSFET

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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In Stock: 5,990

Stock:

5,990 Can Ship Immediately

Factory Lead-Time:

21 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$5.14 $5.14
$4.32 $43.20
$4.23 $211.50
$3.48 $348.00
$3.42 $855.00
$3.10 $1,550.00
$2.65 $2,650.00
$2.56 $6,400.00
Product Attribute Attribute Value
ROHM Semiconductor
Product Category: MOSFET
RoHS:  Details
Si
Through Hole
TO-220FM-3
N-Channel
1 Channel
600 V
20 A
196 mOhms
- 20 V, + 20 V, - 30 V, + 30 V
4 V
60 nC
- 55 C
+ 155 C
68 W
Enhancement
Tube
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 67 ns
Forward Transconductance - Min: 5 S
Product Type: MOSFET
Rise Time: 53 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: Power MOSFET
Typical Turn-Off Delay Time: 150 ns
Typical Turn-On Delay Time: 35 ns
Part # Aliases: R6020ENX
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USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

R60/R65 N-Ch Power MOSFETs

ROHM Semiconductor R60/R65 N-Ch Power MOSFETs provide a single channel output with 600V or 650V drain-source voltage in a TO-220FM-3 package. The R60/R65 MOSFETs have an operating temperature from -55°C to +150°C and power dissipation options of 40W, 46W, 48W, 53W, 68W, 74W, or 86W. The R60/R65 N-Ch Power MOSFETs are ideal for switching applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

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