UJ4C075060K3S

Qorvo
431-UJ4C075060K3S

UJ4C075060K3S

Mfr.:

Description:
JFET 750V/60mOhm, N-Off SiC CASCODE, G4, TO-247-3L, REDUCED RTH

Datasheet:

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In Stock: 5,409

Stock:

5,409 Can Ship Immediately

Factory Lead-Time:

17 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$9.63 $9.63
$8.71 $87.10
$7.20 $864.00
$6.27 $3,197.70
$5.89 $6,007.80
2,520 Quote
Product Attribute Attribute Value
Qorvo
Product Category: JFET
RoHS:  Details
SiC
Through Hole
TO-247-3
N-Channel
Single
750 V
28 A
74 mOhms
155 W
- 55 C
+ 175 C
UJ4C
AEC-Q101
Tube
Brand: Qorvo
Product Type: JFETs
Factory Pack Quantity: 30
Subcategory: Transistors
Tradename: SiC FET
Unit Weight: 0.211644 oz
USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541210000
ECCN:
EAR99

High-Performance SiC FETs

UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UJ4C/SC 750V Gen 4 SiC FETs

UnitedSiC / Qorvo UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without the need to change gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the UnitedSiC / Qorvo UJ4C/SC FETs.

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