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UJ4C075060B7S

Name: Qorvo UJ4C075060B7S
Brand: Qorvo
SKU: 431-UJ4C075060B7S
Price: 8.21 USD
Availability: OutOfStock

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Mouser #:

431-UJ4C075060B7S

Mfr. #:

UJ4C075060B7S

Mfr.:

Qorvo

Description:

JFET

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

UJ4C075060B7S Datasheet (PDF)

ECAD Model:

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Stock:: 0

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On Order:: 795

Expected 07-Dec-23
Factory Lead-Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$8.21	$8.21
	$7.42	$74.20
	$6.15	$615.00
	$5.35	$2,675.00
Full Reel (Order in multiples of 800)
	$5.02	$4,016.00
	$4.86	$11,664.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	JFET
RoHS:	Details
Technology:	SiC
Mounting Style:	SMD/SMT
Package / Case:	D2PAK-7L
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	25.8 A
Rds On - Drain-Source Resistance:	58 mOhms
Pd - Power Dissipation:	128 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Qorvo
Product Type:	JFETs
Factory Pack Quantity:	800
Subcategory:	Transistors

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Product Compliance

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

UnitedSiC / Qorvo 750V UJ4C/SC SiC FETs in D2PAK-7L Package are available in multiple on-resistance options from 9mΩ to 60mΩ. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class R_DS x Area Figure of Merit, resulting in the lowest conduction losses in a small die. The D2PAK-7L package provides reduced inductance from compact internal connection loops, which, along with the included Kelvin source connection, results in low switching loss, enabling higher frequency operation and improved system power density. Five parallel gull-wing source connections allow low inductance and high current usage. The silver-sinter die-attach results in very low thermal resistance for maximum heat extraction on standard PCBs and IMS substrates with liquid cooling. These SiC FETs offer a low body diode, ultra-low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. The standard gate-drive characteristics of the FETs make them ideal replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices.

QSPICE™ Simulator

Qorvo QSPICE™ Simulator delivers a significant step in the evolution of circuit simulation. QSPICE provides reliable power and analog simulation with speed and accuracy, with the ability to incorporate massive quantities of digital logic. The QSPICE modeling language was created with the advantage of hindsight from having authored thousands of mixed-mode simulation models. This design tool is licensed for commercial and educational use by everyone, is free to download and use, and has no feature limitations.

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