UJ4C075023B7S

Qorvo
431-UJ4C075023B7S

UJ4C075023B7S

Mfr.:

Description:
JFET

Lifecycle:
New Product: New from this manufacturer.

Datasheet:

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information
Learn more about Qorvo UJ4C075023B7S

In Stock: 354

Stock:

354 Can Ship Immediately

Factory Lead-Time:

27 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
$15.54 $15.54
$14.28 $142.80
$12.06 $1,206.00
$10.77 $5,385.00
Full Reel (Order in multiples of 800)
$10.41 $8,328.00
Product Attribute Attribute Value
Qorvo
Product Category: JFET
RoHS:  Details
SiC
SMD/SMT
D2PAK-7L
N-Channel
750 V
64 A
23 mOhms
278 W
- 55 C
+ 175 C
Reel
Cut Tape
Brand: Qorvo
Product Type: JFETs
Factory Pack Quantity: 800
Subcategory: Transistors

Datasheet

Show All
Show Less
This functionality requires JavaScript to be enabled.
USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

750V UJ4C/SC SiC FETs in D2PAK-7L Package

UnitedSiC / Qorvo 750V UJ4C/SC SiC FETs in D2PAK-7L Package are available in multiple on-resistance options from 9mΩ to 60mΩ. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class RDS x Area Figure of Merit, resulting in the lowest conduction losses in a small die. The D2PAK-7L package provides reduced inductance from compact internal connection loops, which, along with the included Kelvin source connection, results in low switching loss, enabling higher frequency operation and improved system power density. Five parallel gull-wing source connections allow low inductance and high current usage. The silver-sinter die-attach results in very low thermal resistance for maximum heat extraction on standard PCBs and IMS substrates with liquid cooling. These SiC FETs offer a low body diode, ultra-low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. The standard gate-drive characteristics of the FETs make them ideal replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices.

QSPICE™ Simulator

Qorvo QSPICE™ Simulator delivers a significant step in the evolution of circuit simulation. QSPICE provides reliable power and analog simulation with speed and accuracy, with the ability to incorporate massive quantities of digital logic. The QSPICE modeling language was created with the advantage of hindsight from having authored thousands of mixed-mode simulation models. This design tool is licensed for commercial and educational use by everyone, is free to download and use, and has no feature limitations.

Image Description
Qorvo UJ4SC075009B7S
JFET
Qorvo UJ4SC075011B7S
JFET
Qorvo UJ4SC075018B7S
JFET
Qorvo UJ4C075033B7S
JFET
Qorvo UJ4C075044B7S
JFET
Qorvo UF3N170400B7S
JFET 1700V/400mOhm, SiC, N-ON JFET, G3 Fast, reduced Rth, D2PAK-7L
Qorvo UJ4SC075006K4S
JFET 750V/6mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH
Qorvo UJ4SC075011K4S
JFET 750V/11mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH
Qorvo UJ3D06516TS
Schottky Diodes & Rectifiers 650V/16A SiC SCHOTTKY DIODE G3, TO-220-2L, ENHANCED SURGE

Popular Searches:

SOT-23-3 N-Channel JFET

QuickView

An unexpected error has occurred.


Have a question? Please visit the Help Center.
For questions about a specific order, please login to your account.

If you encounter further trouble, please contact us at 800-346-6873 or email help@mouser.com.