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UJ3N065025K3S

Name: Qorvo UJ3N065025K3S
Brand: Qorvo
SKU: 431-UJ3N065025K3S
Price: 20.17 USD
Availability: InStock

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Mouser #:

431-UJ3N065025K3S

Mfr. #:

UJ3N065025K3S

Mfr.:

Qorvo

Description:

JFET 650V/25mOhm, SiC, N-ON JFET, G3, TO-247-3L, REDUCED Rth

Datasheet:

UJ3N065025K3S Datasheet (PDF)

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In Stock: 244

Stock:: 244 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$20.17	$20.17
	$18.53	$185.30
	$15.64	$1,876.80
	$13.94	$7,109.40
1,020	Quote

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	JFET
RoHS:	Details
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Configuration:	Single
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	85 A
Rds On - Drain-Source Resistance:	25 mOhms
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	UJ3N
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Qorvo
Product Type:	JFETs
Factory Pack Quantity:	30
Subcategory:	Transistors
Tradename:	Sic JFET
Unit Weight:	0.338401 oz

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Product Compliance

USHTS:: 8541290075
CNHTS:: 8541290000
TARIC:: 8541210000
ECCN:: EAR99

UnitedSiC / Qorvo UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (R_DS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low R_DS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

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