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UJ3D1202TS

Name: Qorvo UJ3D1202TS
Brand: Qorvo
SKU: 431-UJ3D1202TS
Price: 2.41 USD
Availability: InStock

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Mouser #:

431-UJ3D1202TS

Mfr. #:

UJ3D1202TS

Mfr.:

Qorvo

Description:

Schottky Diodes & Rectifiers 1200V/2A SiC SCHOTTKY DIODE G3, TO-220, ENHANCED SURGE

Datasheet:

UJ3D1202TS Datasheet (PDF)

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In Stock: 711

Stock:: 711 Can Ship Immediately

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.41	$2.41
	$2.01	$20.10
	$2.00	$100.00
	$1.59	$159.00
	$1.34	$670.00
	$1.08	$1,080.00
	$1.04	$5,200.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	Schottky Diodes & Rectifiers
RoHS:	Details
Product:	Schottky Silicon Carbide Diodes
Mounting Style:	Through Hole
Package / Case:	TO-220-2
Configuration:	Single
Technology:	SiC
If - Forward Current:	2 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.4 V
Ifsm - Forward Surge Current:	30 A
Ir - Reverse Current:	20 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	UJ3D
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Qorvo
Pd - Power Dissipation:	75 W
Product Type:	Schottky Diodes & Rectifiers
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV
Unit Weight:	0.117790 oz

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Product Compliance

USHTS:: 8541100080
CNHTS:: 8541100000
CAHTS:: 8541100090
JPHTS:: 854110090
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Qorvo QSPICE™ Simulator delivers a significant step in the evolution of circuit simulation. QSPICE provides reliable power and analog simulation with speed and accuracy, with the ability to incorporate massive quantities of digital logic. The QSPICE modeling language was created with the advantage of hindsight from having authored thousands of mixed-mode simulation models. This design tool is licensed for commercial and educational use by everyone, is free to download and use, and has no feature limitations.

UJ3D 650V/1200V/1700V SiC Schottky Diodes

UnitedSiC / Qorvo UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (V_F). With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Q_c(Q_rr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications.

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