UJ3C065030T3S

Qorvo
431-UJ3C065030T3S

UJ3C065030T3S

Mfr.:

Description:
MOSFET 650V/30mOhm, SiC, CASCODE, G3, TO-220-3L, REDUCED Rth

Datasheet:

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In Stock: 1,671

Stock:

1,671 Can Ship Immediately
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$18.67 $18.67
$17.16 $171.60
$17.15 $857.50
$14.48 $1,448.00
$12.94 $6,470.00
1,000 Quote
Product Attribute Attribute Value
Qorvo
Product Category: MOSFET
RoHS:  Details
SiC
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
85 A
35 mOhms
- 25 V, + 25 V
4 V
51 nC
- 55 C
+ 175 C
441 W
Enhancement
AEC-Q101
SiC FET
UJ3C
Tube
Brand: Qorvo
Configuration: Single
Fall Time: 15 ns
Product Type: MOSFET
Rise Time: 22 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 56 ns
Typical Turn-On Delay Time: 36 ns
Unit Weight: 0.068784 oz
USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

UJ3C SiC FETs

UnitedSiC / QorvoUJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a new SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection. 

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