UF4C120053K4S

Qorvo
431-UF4C120053K4S

UF4C120053K4S

Mfr.:

Description:
MOSFET 1200V/53mOhm, N-Off SiC CASCODE, G4 FAST, TO-247-4L, REDUCED RTH

Lifecycle:
New Product: New from this manufacturer.

Datasheet:

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Availability

Stock:

0
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On Order:

1,146
Expected 12-Jul-23

Factory Lead-Time:

12
Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
$16.15 $16.15
$14.83 $148.30
$12.52 $1,502.40
$11.18 $5,701.80
$10.82 $11,036.40
Product Attribute Attribute Value
Qorvo
Product Category: MOSFET
RoHS:  Details
SiC
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
34 A
67 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
263 W
Depletion
Tube
Brand: Qorvo
Product Type: MOSFET
Factory Pack Quantity: 30
Subcategory: MOSFETs

Datasheet

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USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

UF4C/SC 1200V Gen 4 SiC FETs

UnitedSiC / Qorvo UF4C/SC 1200V Gen 4 SiC FETs are a high-performance series delivering industry-best Figures of Merit. The UF4C/SC 1200V Gen 4 SiC FETs are ideal for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power supplies, renewables, energy storage, welding machines, UPS, and induction heating applications. Available in 23mΩ to 70mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. This feature allows for flexible design without changing gate drive voltage, easily replacing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices.

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