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UF3C065030K3S

Name: Qorvo UF3C065030K3S
Brand: Qorvo
SKU: 431-UF3C065030K3S
Price: 18.79 USD
Availability: InStock

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Mouser #:

431-UF3C065030K3S

Mfr. #:

UF3C065030K3S

Mfr.:

Qorvo

Description:

MOSFET 650V/30mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth

Datasheet:

UF3C065030K3S Datasheet (PDF)

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In Stock: 413

Stock:: 413 Can Ship Immediately

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$18.79	$18.79
	$16.56	$165.60
	$14.31	$429.30
	$12.97	$3,501.90

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	MOSFET
RoHS:	Details
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	85 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	441 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SiC FET
Series:	UF3C
Packaging:	Tube
Brand:	Qorvo
Configuration:	Single
Product Type:	MOSFET
Factory Pack Quantity:	30
Subcategory:	MOSFETs
Unit Weight:	0.211644 oz

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
ECCN:: EAR99

UnitedSiC / Qorvo UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The UnitedSiC / Qorvo UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

UnitedSiC / Qorvo UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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