TGF2977-SM

Qorvo Logo
772-TGF2977-SM

TGF2977-SM

Mfr.:

Description:
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

ECAD Model:
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In Stock: 2,552

Stock:

2,552 Can Ship Immediately

Factory Lead-Time:

15 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $41.78 $41.78
25 $20.89 $522.25
100 $20.88 $2,088.00
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
DC to 12 GHz
13 dB
N-Channel
32 V
- 2.7 V
326 mA
6 W
+ 225 C
8.4 W
SMD/SMT
QFN-16
Tray
Brand: Qorvo
Configuration: Single
Development Kit: TGF2977-SMEVB1
Height: 0.203 mm
Length: 3 mm
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Product Type: RF JFET Transistors
Series: TGF2977
Factory Pack Quantity: 50
Subcategory: Transistors
Type: GaN SiC HEMT
Width: 3 mm
Part # Aliases: 1127257 1127257
Unit Weight: 0.002014 oz
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USHTS:
8542390001
CNHTS:
8541290000
CAHTS:
8542390000
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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