TGF2933

Qorvo
772-TGF2933

TGF2933

Mfr.:

Description:
RF JFET Transistors DC-25GHz 7Watt NF 1.3dB GaN

ECAD Model:
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In Stock: 13

Stock:

13 Can Ship Immediately

Factory Lead-Time:

20 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
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Pricing (USD)

Qty. Unit Price
Ext. Price
$75.27 $75.27
$50.18 $1,254.50
$36.63 $3,663.00
$32.38 $8,095.00
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
HEMT
GaN SiC
DC to 25 GHz
15 dB
N-Channel
-
-
80 mA
7.2 W
-
- 40 C
+ 85 C
8.9 W
SMD/SMT
DIE
Gel Pack
Application: Defense and Aerospace, Broadband Wireless
Brand: Qorvo
Configuration: Single
Forward Transconductance - Min: -
NF - Noise Figure: 1.3 dB
Product Type: RF JFET Transistors
Series: TGF2933
Factory Pack Quantity: 50
Subcategory: Transistors
Part # Aliases: 1113799
                    
Qorvo Die products:

Mouser is not authorized to break pack on these products.

Please contact your Mouser Technical Representative for further
information.



5-0810-13

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USHTS:
8542390001
CNHTS:
8541290000
CAHTS:
8542330000
MXHTS:
8542330201
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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