TGF2929-FS

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772-TGF2929-FS

TGF2929-FS

Mfr.:

Description:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN

ECAD Model:
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Availability

Stock:

Non-Stocked

Factory Lead-Time:

16 Weeks Estimated factory production time.
 
Minimum: 25   Multiples: 25

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Pricing (USD)

Qty. Unit Price
Ext. Price
25 $479.25 $11,981.25
Product Attribute Attribute Value
Qorvo
Product Category: RF MOSFET Transistors
RoHS:  Details
N-Channel
GaN-on-SiC
12 A
28 V
3.5 GHz
14 dB
107 W
NI-360
Tray
Brand: Qorvo
Moisture Sensitive: Yes
Pd - Power Dissipation: 144 W
Product Type: RF MOSFET Transistors
Series: TGF2929
Factory Pack Quantity: 25
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 145 V
Vgs th - Gate-Source Threshold Voltage: - 2.9 V
Part # Aliases: TGF2929 1123716
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USHTS:
8542390001
CNHTS:
8542319000
CAHTS:
8542390000
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

TGF2929 GaN RF Power Transistors

Qorvo TGF2929 GaN RF Power Transistors are discrete GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMTs (High-Electron Mobility Transistor) that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.