T2G6001528-Q3

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772-T2G6001528-Q3

T2G6001528-Q3

Mfr.:

Description:
RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN

Datasheet:

ECAD Model:
T2G6001528-Q3 ECAD Model
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More Information
Learn more about Qorvo T2G6001528-Q3

In Stock: 146

Stock:

146 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
1 $192.26 $192.26
25 $130.37 $3,259.25
100 $103.14 $10,314.00
300 Quote
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
NI-200
Tray
Brand: Qorvo
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: T2G6001528
Factory Pack Quantity: 100
Subcategory: Transistors
Part # Aliases: T2G6001528 1100001
Unit Weight: 0.237597 oz
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USHTS:
8542330001
CNHTS:
8541290000
CAHTS:
8542330000
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
EAR99

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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