T1G4020036-FS

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772-T1G4020036-FS

T1G4020036-FS

Mfr.:

Description:
RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt

Datasheet:

ECAD Model:
T1G4020036-FS ECAD Model
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This product may require additional documentation to export from the United States.

In Stock: 25

Stock:

25 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
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Pricing (USD)

Qty. Unit Price
Ext. Price
1 $1,232.10 $1,232.10
25 Quote
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  Details
HEMT
GaN-on-SiC
3.5 GHz
16 dB
N-Channel
260 W
NI-650
Tray
Brand: Qorvo
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: T1G4020036
Factory Pack Quantity: 25
Subcategory: Transistors
Type: GaN SiC HEMT
Part # Aliases: T1G4020036 1111631
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USHTS:
8542330001
CNHTS:
8542319000
CAHTS:
8542330000
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
3A001.b.3.a

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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