T1G4012036-FS

Qorvo
772-T1G4012036-FS

T1G4012036-FS

Mfr.:

Description:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak

Datasheet:

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This product may require additional documentation to export from the United States.

Availability

Stock:

Non-Stocked

Factory Lead-Time:

 
Minimum: 25   Multiples: 25

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Pricing (USD)

Qty. Unit Price
Ext. Price
$316.78 $7,919.50
100 Quote
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  Details
HEMT
GaN-on-SiC
3.3 GHz
18.4 dB
N-Channel
36 V
12 A
- 2.9 V
117 W
SMD/SMT
Tray
Brand: Qorvo
Moisture Sensitive: Yes
Product: GaN RF Power Transistors
Product Type: RF JFET Transistors
Series: T1G4012036
Factory Pack Quantity: 25
Subcategory: Transistors
Type: GaN SiC HEMT
Part # Aliases: 1096026

Datasheet

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USHTS:
8542330001
CNHTS:
8542319000
CAHTS:
8542330000
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
3A001.b.3.a

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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pHEMT RF JFET Transistors

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