T1G3000532-SM

772-T1G3000532-SM

T1G3000532-SM

Mfr.:
Qorvo

Description:
RF JFET Transistors .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V

Lifecycle:
Obsolete
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

Availability

Stock:

Not Available
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
0.03 GHz to 3.5 GHz
15.7 dB
N-Channel
32 V
- 2.7 V
0.6 A
5.7 W
9.1 W
SMD/SMT
QFN-32
Tray
Brand: Qorvo
Configuration: Single
Development Kit: T1G3000532-SM-EVB
Moisture Sensitive: Yes
Product: RF Transistors
Product Type: RF JFET Transistors
Rds On - Drain-Source Resistance: 50 Ohms
Factory Pack Quantity: 25
Subcategory: Transistors
Type: GaN SiC HEMT
Part # Aliases: 1112209
Unit Weight: 0.006653 oz
This functionality requires JavaScript to be enabled.
USHTS:
8542330001
CNHTS:
8542319000
CAHTS:
8542330000
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
EAR99

T1Gxx GaN Power Transistors

Qorvo T1G GaN HEMT Transistors are 5W to 285W (P3dB) discrete GaN transistors on SiC HEMT which operates from DC up to 6GHz. These devices are constructed with Qorvo's proven 0.25um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Learn More