T1G2028536-FS

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772-T1G2028536-FS

T1G2028536-FS

Mfr.:

Description:
RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

ECAD Model:
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Availability

Stock:

Non-Stocked

Factory Lead-Time:

16 Weeks Estimated factory production time.
 
Minimum: 25   Multiples: 25

$-.--
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Pricing (USD)

Qty. Unit Price
Ext. Price
25 $723.27 $18,081.75
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
2 GHz
18 dB
N-Channel
36 V
145 V
24 A
260 W
48 V
+ 250 C
288 W
SMD/SMT
NI-780
Tray
Brand: Qorvo
Configuration: Single
Moisture Sensitive: Yes
Product: RF Power Transistor
Product Type: RF JFET Transistors
Series: T1G2028536
Factory Pack Quantity: 25
Subcategory: Transistors
Type: GaN SiC HEMT
Part # Aliases: T1G2028536 1110346
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USHTS:
8542330001
CNHTS:
8541210000
CAHTS:
8542330000
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.