QPD1029L

Qorvo Logo
772-QPD1029L

QPD1029L

Mfr.:

Description:
RF JFET Transistors 1.2-1.4GHz,1500W,65V,GaN RF I/P-Mtchd T

Datasheet:

ECAD Model:
QPD1029L ECAD Model
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information
Learn more about Qorvo QPD1029L

In Stock: 12

Stock:

12 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $1,456.47 $1,456.47
18 Quote
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
RoHS:  Details
Si
Brand: Qorvo
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD1029L
Factory Pack Quantity: 18
Subcategory: Transistors

Datasheet

Show All
Show Less
This functionality requires JavaScript to be enabled.
USHTS:
8541497080
ECCN:
EAR99

QPD1029L GaN RF IMFET Transistor

Qorvo QPD1029L GaN RF Internally Matched FET (IMFET) Transistor is a 1500W (P3dB) discrete GaN on SiC High Electron Mobility Transistor (HEMT). This RF IMFET operates between 1.2GHz to 1.4GHz frequency range. The QPD1029L transistor provides ease of external board match and saves board space. This transistor is a RoHS compliant device. The QPD1029L IMFET transistor device is used in an industry standard air cavity package and is ideally suited for radar.

Image Description
ams OSRAM LG R971-KN-1-0-20-R18 Also Bought Image
Standard LEDs - SMD Green, 570nm 26mcd, 20mA
Qorvo QPD1015L Also Bought Image
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
Analog Devices Inc. HMC936ALP6E Also Bought Image
Phase Detectors / Shifters 6-bit Digital Phase Shifter, 1.2 to 1.4
Daniels Manufacturing M22520/1-01 Also Bought Image
Crimpers / Crimping Tools Daniels AF8 Crimp Tool

Popular Searches:

GaAs RF JFET Transistors