QPD1029L

Qorvo Logo
772-QPD1029L

QPD1029L

Mfr.:

Description:
RF JFET Transistors 1.2-1.4GHz,1500W,65V,GaN RF I/P-Mtchd T

ECAD Model:
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In Stock: 12

Stock:

12 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
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Pricing (USD)

Qty. Unit Price
Ext. Price
1 $1,456.47 $1,456.47
18 Quote
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
RoHS:  Details
Si
Brand: Qorvo
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD1029L
Factory Pack Quantity: 18
Subcategory: Transistors

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USHTS:
8541497080
ECCN:
EAR99

QPD1029L GaN RF IMFET Transistor

Qorvo QPD1029L GaN RF Internally Matched FET (IMFET) Transistor is a 1500W (P3dB) discrete GaN on SiC High Electron Mobility Transistor (HEMT). This RF IMFET operates between 1.2GHz to 1.4GHz frequency range. The QPD1029L transistor provides ease of external board match and saves board space. This transistor is a RoHS compliant device. The QPD1029L IMFET transistor device is used in an industry standard air cavity package and is ideally suited for radar.

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