QPD1025L

Qorvo
772-QPD1025L

QPD1025L

Mfr.:

Description:
RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V

Datasheet:

ECAD Model:
QPD1025L ECAD Model
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More Information
Learn more about Qorvo QPD1025L

In Stock: 13

Stock:

13 Can Ship Immediately
Quantities greater than 13 will be subject to minimum order requirements.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$1,456.47 $1,456.47
18 Quote
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
1 GHz to 1.1 GHz
22.9 dB
28 A
1.5 kW
225 V
- 40 C
+ 85 C
758 W
SMD/SMT
NI-1230-4
Tray
Application: Avionics, IFF Transponders
Brand: Qorvo
Configuration: Dual Gate Dual Drain
Development Kit: QPD1025LEVB1
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD1025L
Factory Pack Quantity: 18
Subcategory: Transistors
Unit Weight: 1.399148 oz
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USHTS:
8541290075
CNHTS:
8541290000
CAHTS:
8517620090
TARIC:
8517620000
ECCN:
EAR99

QPD1025 & QPD1025L RF Input-Matched Transistors

Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. The QPD1025 and QPD1025L transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.

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