QPD1004SR

Qorvo Logo
772-QPD1004SR

QPD1004SR

Mfr.:

Description:
RF JFET Transistors .03-1.2GHz 25W 50V GaN

ECAD Model:
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In Stock: 250

Stock:

250 Can Ship Immediately

Factory Lead-Time:

26 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--
Full Reel (Order in multiples of 100)
Cut Tape
MouseReel™ (+$7.00)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1 $133.31 $133.31
25 $96.68 $2,417.00
Full Reel (Order in multiples of 100)
100 $96.68 $9,668.00
† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable.
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
30 MHz to 1200 MHz
20.8 dB
N-Channel
50 V
145 V
3.6 A
40 W
55 V
- 40 C
+ 85 C
27.6 W
SMD/SMT
DFN-8
Reel
Cut Tape
MouseReel
Brand: Qorvo
Development Kit: QPD1004EVB1
Forward Transconductance - Min: -
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD1004
Factory Pack Quantity: 100
Subcategory: Transistors
Part # Aliases: QPD1004
Unit Weight: 0.162567 oz

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USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
854239099
KRHTS:
8541299000
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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