QPD1003

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772-QPD1003

QPD1003

Mfr.:

Description:
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN

ECAD Model:
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In Stock: 18

Stock:

18 Can Ship Immediately

Factory Lead-Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
1 $1,192.59 $1,192.59
18 Quote
Product Attribute Attribute Value
Qorvo
RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
1.2 GHz to 1.4 GHz
19.9 dB
N-Channel
50 V
145 V
15 A
540 W
- 40 C
+ 85 C
370 W
SMD/SMT
RF-565
Tray
Brand: Qorvo
Configuration: Single
Development Kit: QPD1003PCB401
Moisture Sensitive: Yes
Operating Temperature Range: - 40 C to + 85 C
Product Type: RF JFET Transistors
Series: QPD1003
Factory Pack Quantity: 18
Subcategory: Transistors
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
Part # Aliases: 1131389 1131389
Unit Weight: 3.691596 oz
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USHTS:
8542390001
CNHTS:
8541290000
CAHTS:
8542390000
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.