QPD0030

Qorvo Logo
772-QPD0030

QPD0030

Mfr.:

Description:
RF JFET Transistors DC-4GHz 45W GaN 48V

ECAD Model:
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In Stock: 663

Stock:

663 Can Ship Immediately

Factory Lead-Time:

14 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $77.18 $77.18
25 $54.02 $1,350.50
100 $43.73 $4,373.00
Full Reel (Order in multiples of 250)
250 $36.53 $9,132.50
500 Quote
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
GaN
DC to 4 GHz
21.7 dB
-
-
-
45 W
-
- 40 C
45 W
SMD/SMT
QFN-20
Reel
Cut Tape
Application: Microcell Base Station, W-CDMA / LTE
Brand: Qorvo
Configuration: Single
Forward Transconductance - Min: -
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD0030
Factory Pack Quantity: 250
Subcategory: Transistors
Part # Aliases: 1132528 1132528
Unit Weight: 0.340870 oz

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USHTS:
8542390001
CNHTS:
8541290000
ECCN:
5A991.b

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

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