QPD0020

Qorvo Logo
772-QPD0020

QPD0020

Mfr.:

Description:
RF JFET Transistors DC-6 GHz, 3 W, 48V GaN RF Pwr Tr

ECAD Model:
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In Stock: 197

Stock:

197 Can Ship Immediately

Factory Lead-Time:

14 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $68.64 $68.64
25 $48.05 $1,201.25
Full Reel (Order in multiples of 100)
100 $38.90 $3,890.00
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
HEMT
GaN-on-SiC
DC to 6 GHz
16.7 dB
34.7 W
48 V
SMD/SMT
QFN-20
Reel
Cut Tape
Brand: Qorvo
Development Kit: QPD0020EVB02
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD0020
Factory Pack Quantity: 100
Subcategory: Transistors
Part # Aliases: QPD0020SR
Unit Weight: 0.050459 oz

USHTS:
8542390001
CNHTS:
8541290000
ECCN:
EAR99

QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

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