QPD0007SR

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772-QPD0007SR

QPD0007SR

Mfr.:

Description:
RF JFET Transistors 3.4-3.8GHz 15W 50V GaN Single Channel

ECAD Model:
QPD0007SR ECAD Model
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More Information
Learn more about Qorvo QPD0007SR

In Stock: 100

Stock:

100 Can Ship Immediately

Factory Lead-Time:

14 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
1 $21.89 $21.89
25 $15.41 $385.25
Full Reel (Order in multiples of 100)
100 $12.53 $1,253.00
Product Attribute Attribute Value
Qorvo
Product Category: RF JFET Transistors
RoHS:  Details
GaN
Reel
Cut Tape
Brand: Qorvo
Moisture Sensitive: Yes
Product Type: RF JFET Transistors
Series: QPD0007
Factory Pack Quantity: 100
Subcategory: Transistors
Part # Aliases: QPD0007
USHTS:
8542390001
CNHTS:
8541290000
ECCN:
5A991.g

QPD0007 GaN RF Transistors

Qorvo QPD0007 GaN RF Transistors are the single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) that come in a DFN package. These RF transistors are single-stage, unmatched transistors capable of delivering P3dB output power of 20W at +48V operation. The QPD0007 transistors operate at DC to 5GHz frequency range and offer 73% drain efficiency at 3.5GHz. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.

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