QPD0005TR13

QPD0005 GaN RF Transistors

Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate from 2.5GHz to 5GHz frequency range. The QPD0005 RF transistors are single-stage, unmatched transistors capable of delivering P_SAT of 8.7W at 48V operation. These transistors come in 4.5mm x 4.0mm dimensions and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general purpose applications.