QPA2612

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772-QPA2612

QPA2612

Mfr.:

Description:
RF Amplifier 8-12 GHz 12W PA

ECAD Model:
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Availability

Stock:

0
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On Order:

100
Expected 31-Aug-22

Factory Lead-Time:

16
Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $264.49 $264.49
25 $216.63 $5,415.75
100 Quote
Product Attribute Attribute Value
Qorvo
RF Amplifier
Shipping Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  Details
SMD/SMT
QFN-24
Power Amplifiers
GaN SiC
8 GHz to 12 GHz
34.2 dB
24 V
250 mA
- 40 C
+ 85 C
QPA2612
Brand: Qorvo
Development Kit: QPA2612EVB
Input Return Loss: 21 dB
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Pd - Power Dissipation: 26.8 W
Product Type: RF Amplifier
Factory Pack Quantity: 50
Subcategory: Wireless & RF Integrated Circuits
Unit Weight: 0.356867 oz

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USHTS:
8542330001
TARIC:
8542330000
ECCN:
3A001.b.2.b.2

QPA261x X-Band Power Amplifiers

Qorvo QPA261x X-Band Power Amplifiers are high-performance amplifiers fabricated with 0.15µm GaN on SiC process (QGaN15). These power amplifiers support tight lattice spacing requirements for phased array radar applications. The QPA261x amplifiers feature RF input and output ports that are matched to 50Ω and include integrated DC blocking capacitors. These power amplifiers are stored at -55°C  to 150°C temperature range. The QPA261x amplifiers operate at -4V to 0V maximum gate voltage range. These power amplifiers are ideal for use in radar, communication, and Satcom.

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