UJ4C075023K4S

Qorvo / UnitedSiC
431-UJ4C075023K4S

UJ4C075023K4S

Mfr.:

Description:
JFET 750V/23mOhm, N-Off SiC CASCODE, G4, TO-247-4L, REDUCED RTH

ECAD Model:
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In Stock: 2,118

Stock:

2,118 Can Ship Immediately

Factory Lead-Time:

9 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$15.40 $15.40
$14.16 $141.60
$11.95 $1,434.00
$10.67 $5,441.70
$10.48 $10,689.60
Product Attribute Attribute Value
Qorvo
Product Category: JFET
RoHS:  Details
SiC
SMD/SMT
TO-247-4
N-Channel
750 V
66 A
23 mOhms
306 W
- 55 C
+ 175 C
UJ4C
AEC-Q101
Tube
Brand: Qorvo / UnitedSiC
Product Type: JFETs
Factory Pack Quantity: 30
Subcategory: Transistors

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USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

QSPICE™ Simulator

Qorvo QSPICE™ Simulator delivers a significant step in the evolution of circuit simulation. QSPICE provides reliable power and analog simulation with speed and accuracy, with the ability to incorporate massive quantities of digital logic. The QSPICE modeling language was created with the advantage of hindsight from having authored thousands of mixed-mode simulation models. This design tool is licensed for commercial and educational use by everyone, is free to download and use, and has no feature limitations.

High-Performance SiC FETs

UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UJ4C/SC 750V Gen 4 SiC FETs

UnitedSiC / Qorvo UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without the need to change gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the UnitedSiC / Qorvo UJ4C/SC FETs.

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