UJ3D06560KSD

Qorvo / UnitedSiC
431-UJ3D06560KSD

UJ3D06560KSD

Mfr.:

Description:
Schottky Diodes & Rectifiers 650V/60A SiC SCHOTTKY DIODE G3, TO-247, DUAL

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

In Stock: 544

Stock:

544 Can Ship Immediately

Factory Lead-Time:

14 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
$14.54 $14.54
$13.36 $133.60
$11.28 $1,353.60
$10.07 $5,135.70
$9.89 $10,087.80
Product Attribute Attribute Value
Qorvo
Product Category: Schottky Diodes & Rectifiers
RoHS:  Details
Schottky Silicon Carbide Diodes
Through Hole
TO-247-3
Dual
SiC
60 A
650 V
1.5 V
330 A
60 uA
- 55 C
+ 175 C
UJ3D
AEC-Q101
Tube
Brand: Qorvo / UnitedSiC
Pd - Power Dissipation: 577 W
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Unit Weight: 0.373669 oz
This functionality requires JavaScript to be enabled.
USHTS:
8541100080
CNHTS:
8541100000
CAHTS:
8541100090
JPHTS:
854110090
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

QSPICE™ Simulator

Qorvo QSPICE™ Simulator delivers a significant step in the evolution of circuit simulation. QSPICE provides reliable power and analog simulation with speed and accuracy, with the ability to incorporate massive quantities of digital logic. The QSPICE modeling language was created with the advantage of hindsight from having authored thousands of mixed-mode simulation models. This design tool is licensed for commercial and educational use by everyone, is free to download and use, and has no feature limitations.

UJ3D 650V/1200V/1700V SiC Schottky Diodes

UnitedSiC / Qorvo UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications. 

Image Description
Texas Instruments TPSF12C1QEVM
Power Management IC Development Tools TPSF12C1-Q1 single-phase active EMI filter evaluation module
Qorvo UJ4SC075009B7S
JFET
Qorvo UJ4SC075011B7S
JFET
Qorvo UJ4C075023B7S
JFET
Qorvo UJ4C075033B7S
JFET
Qorvo UJ4C075044B7S
JFET
Qorvo UJ4SC075006K4S
JFET 750V/6mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH
Qorvo UJ4SC075011K4S
JFET 750V/11mOhm, N-Off SiC STACK CASCODE, G4, TO-247-4L, REDUCED RTH
Qorvo UJ3D06516TS
Schottky Diodes & Rectifiers 650V/16A SiC SCHOTTKY DIODE G3, TO-220-2L, ENHANCED SURGE
Vishay LVB2560-M3/45
Bridge Rectifiers 25 Amps 600 Volts