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UF4C120070K4S

Name: Qorvo UF4C120070K4S
Brand: Qorvo / UnitedSiC
SKU: 431-UF4C120070K4S
Price: 13.9 USD
Availability: InStock

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Mouser #:

431-UF4C120070K4S

Mfr. #:

UF4C120070K4S

Description:

MOSFET 1200V/70mOhm, N-Off SiC CASCODE, G4 FAST, TO-247-4L, REDUCED RTH

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

UF4C120070K4S Datasheet (PDF)

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In Stock: 516

Stock:: 516 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 36 Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$13.90	$13.90
	$12.77	$127.70
	$10.77	$1,292.40
	$9.62	$4,906.20
	$9.31	$9,496.20

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	MOSFET
RoHS:	Details
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	27.5 A
Rds On - Drain-Source Resistance:	91 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	37.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	217 W
Channel Mode:	Depletion
Packaging:	Tube
Brand:	Qorvo / UnitedSiC
Product Type:	MOSFET
Factory Pack Quantity:	30
Subcategory:	MOSFETs

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UF4C120070K4S Datasheet (PDF)

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
ECCN:: EAR99

UnitedSiC / Qorvo UF4C/SC 1200V Gen 4 SiC FETs are a high-performance series delivering industry-best Figures of Merit. The UF4C/SC 1200V Gen 4 SiC FETs are ideal for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power supplies, renewables, energy storage, welding machines, UPS, and induction heating applications. Available in 23mΩ to 70mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. This feature allows for flexible design without changing gate drive voltage, easily replacing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices.

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