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IMZ120R090M1HXKSA1

Infineon Technologies
726-IMZ120R090M1HXKS

IMZ120R090M1HXKSA1

Mfr.:

Description:
MOSFET SIC DISCRETE

Datasheet:

ECAD Model:
IMZ120R090M1HXKSA1 ECAD Model
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Learn more about Infineon Technologies IMZ120R090M1HXKSA1

In Stock: 355

Stock:

355
Can Ship Immediately

On Order:

480

Factory Lead-Time:

67
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
 
Minimum: 1   Multiples: 1

$-.--
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Pricing (USD)

Qty. Unit Price
Ext. Price
$15.47 $15.47
$14.22 $142.20
$12.01 $1,201.00
$10.74 $5,155.20
1,200 Quote
Product Attribute Attribute Value
Infineon
Product Category: MOSFET
RoHS:  Details
SiC
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
26 A
117 mOhms
- 7 V, + 23 V
5.7 V
21 nC
- 55 C
+ 150 C
115 W
Enhancement
CoolSiC
IMZ120RXM1H
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 11 ns
Forward Transconductance - Min: 5 S
Product Type: MOSFET
Rise Time: 3 ns
Factory Pack Quantity: 240
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11.5 ns
Typical Turn-On Delay Time: 5.4 ns
Part # Aliases: IMZ120R090M1H SP001946182
Unit Weight: 0.211644 oz
USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltages classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter-set, which is used for the implementation of application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

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