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IGLR60R190D1XUMA1

Name: Infineon IGLR60R190D1XUMA1
Brand: Infineon Technologies
SKU: 726-IGLR60R190D1XUMA
Price: 7.52 USD
Availability: InStock

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Mouser #:

726-IGLR60R190D1XUMA

Mfr. #:

IGLR60R190D1XUMA1

Description:

MOSFET

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

IGLR60R190D1XUMA1 Datasheet (PDF)

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In Stock: 4,871

Stock:: 4,871 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 39 Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$7.52	$7.52
	$6.45	$64.50
	$5.85	$146.25
	$5.37	$537.00
	$5.06	$1,265.00
	$4.74	$2,370.00
	$4.27	$4,270.00
	$4.00	$10,000.00
Full Reel (Order in multiples of 5000)
	$3.90	$19,500.00

† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	GaN
Mounting Style:	SMD/SMT
Package / Case:	TSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	12.8 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	3.2 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	55.5 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Series:	CoolGaN 600V
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14 ns
Moisture Sensitive:	Yes
Product Type:	MOSFET
Rise Time:	12 ns
Factory Pack Quantity:	5000
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	IGLR60R190D1 SP005635196

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Datasheet

IGLR60R190D1XUMA1 Datasheet (PDF)

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Product Compliance

USHTS:: 8541290095
CAHTS:: 8541290000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Infineon Technologies CoolGaN™ 600V Gate Injection Technology (GIT) High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses. These GaN enhancement-mode power transistors are available in a ThinPAK 5x6 surface-mount package, ideal for applications that require a compact device without a heatsink. The small 5mm x 6mm² footprint and low 1mm profile height makes the Infineon Technologies CoolGaN™ 600V GIT HEMTs perfect for achieving high power density.

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