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BSD316SNH6327XTSA1

Name: Infineon BSD316SNH6327XTSA1
Brand: Infineon Technologies
SKU: 726-BSD316SNH6327XTS
Price: 0.37 USD
Availability: InStock

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Mouser #:

726-BSD316SNH6327XTS

Mfr. #:

BSD316SNH6327XTSA1

Description:

MOSFET SMALL SIGNAL N-CH

Datasheet:

BSD316SNH6327XTSA1 Datasheet (PDF)

ECAD Model:

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In Stock: 8,540

Stock:: 8,540 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Minimum: 1 Multiples: 1

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.37	$0.37
	$0.282	$2.82
	$0.133	$13.30
	$0.108	$108.00
Full Reel (Order in multiples of 3000)
	$0.091	$273.00
	$0.083	$747.00
	$0.077	$1,848.00
	$0.069	$3,105.00
	$0.067	$6,633.00

† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

BSD316SN H6327

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$0.43

Min:

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	1.4 A
Rds On - Drain-Source Resistance:	192 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	600 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Series:	BSD316
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	1 ns
Forward Transconductance - Min:	2.3 S
Height:	0.9 mm
Length:	2 mm
Product Type:	MOSFET
Rise Time:	2.3 ns
Factory Pack Quantity:	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	5.8 ns
Typical Turn-On Delay Time:	3.4 ns
Width:	1.25 mm
Part # Aliases:	BSD316SN H6327 SP000917668
Unit Weight:	0.000265 oz

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Attributes selected: 0

Documents (17)

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Datasheet

BSD316SNH6327XTSA1 Datasheet (PDF)

Application Notes

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Packaging:PG-SOT363-6-6 | BSD316SNH6327XTSA1 (PDF)

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Product Compliance

USHTS:: 8541210095
CNHTS:: 8541210000
CAHTS:: 8541290000
JPHTS:: 8541290100
KRHTS:: 8541219000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.

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