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6EDL04N02PR

Name: Infineon 6EDL04N02PR
Brand: Infineon Technologies
SKU: 726-6EDL04N02PR
Price: 3.91 USD
Availability: InStock

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Mouser #:

726-6EDL04N02PR

Mfr. #:

6EDL04N02PR

Description:

Gate Drivers 200V 3-Phase,0.375A BSD, OCP, EN & FAULT

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

6EDL04N02PR Datasheet (PDF)

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In Stock: 11,266

Stock:: 11,266 Can Ship Immediately

Shipping Restricted
Factory Lead-Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Minimum: 1 Multiples: 1

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.91	$3.91
	$3.52	$35.20
	$2.88	$288.00
	$2.74	$685.00
	$2.46	$1,230.00
	$2.13	$2,130.00
Full Reel (Order in multiples of 3000)
	$1.80	$5,400.00
	$1.79	$10,740.00
9,000	Quote

† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:

6EDL04N02PRXUMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$3.84

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Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:	Details
Product:	IGBT, MOSFET Gate Drivers
Type:	Full-Bridge
Mounting Style:	SMD/SMT
Package / Case:	TSSOP-28
Number of Drivers:	6 Driver
Number of Outputs:	6 Output
Output Current:	165 mA
Supply Voltage - Min:	13 V
Supply Voltage - Max:	17.5 V
Rise Time:	60 ns
Fall Time:	26 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	Infineon SOI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Height:	1.2 mm
Length:	9.7 mm
Logic Type:	CMOS, LSTTL
Moisture Sensitive:	Yes
Operating Supply Current:	750 uA
Pd - Power Dissipation:	600 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	800 ns
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Width:	4.4 mm
Part # Aliases:	SP000926072 6EDL4N2PRXT 6EDL04N02PRXUMA1
Unit Weight:	0.014215 oz

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6EDL04N02PR Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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Product Compliance

USHTS:: 8542310001
CNHTS:: 8542399000
CAHTS:: 8542390000
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ superjunction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on their individual design/system requirements from the currently broadest silicon-based SJ MOSFET portfolio in the industry. As one of the few manufacturers mastering all of the main three power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering consists of silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions, available to choose from, range from exceptional in price-performance through unrivaled in robustness to best-in-class devices. This enables customers to build the most efficient, environmentally friendliest, and most sustainable applications.

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers includes 3-phase, half-bridge, or high- and low-side drivers for low (24V, 36V, and 48V) and medium voltage (60V, 80V, 100V, and 120V) motor control applications. The 3-phase product utilizes Infineon’s unique Silicon-On-Insulator (SOI) level-shift technology. This feature provides functional isolation with industry-leading negative VS robustness and reduced level-shift losses. A solution is also available with integrated Bootstrap Diodes (BSD) to reduce BOM cost, simplify the layout, and reduce PCB size.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC EV Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends to a large extent on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Already today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Industrial Robotics Motor Control Solutions

Infineon Industrial Robotics Motor Control are semiconductor solutions to boost industrial motor control applications. These solutions include low-voltage power MOSFETs, EiceDRIVER™ gate drivers and XMC4800 microcontrollers. The low voltage power MOSFETs series OptiMOS™ 5 80V and 100V offer low on-state resistance. High power density and efficiency in motor control applications can be achieved with the combination of Infineon's EiceDRIVER 2EDL and 6EDL. Use the XMC4800 microcontroller as the heart of motor control for superior motor control and real time communication via EtherCAT®.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

6ED Full-Bridge Driver ICs

Infineon Technologies 6ED Full-Bridge Driver ICs control power devices like MOS-transistors or IGBTs in 3-phase systems. Based on the used SOI-technology, there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the devices. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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