IRFB7437PBF

Infineon / IR Logo
942-IRFB7437PBF

IRFB7437PBF

Mfr.:

Description:
MOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC

ECAD Model:
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Availability

Stock:

0
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On Order:

1,689
Expected 14-Dec-22
3,000
Expected 05-Apr-23

Factory Lead-Time:

46
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $2.07 $2.07
10 $1.87 $18.70
100 $1.50 $150.00
500 $1.23 $615.00
1,000 $1.17 $1,170.00
Product Attribute Attribute Value
Infineon
MOSFET
RoHS:  Details
Si
Through Hole
TO-220-3
N-Channel
1 Channel
40 V
250 A
2 mOhms
- 20 V, + 20 V
3 V
225 nC
- 55 C
+ 175 C
230 W
Enhancement
StrongIRFET
Tube
Brand: Infineon / IR
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Width: 4.4 mm
Part # Aliases: IRFB7437PBF SP001556080
Unit Weight: 0.068784 oz
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USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
854129010
KRHTS:
8541299000
TARIC:
8542319000
MXHTS:
8542310302
ECCN:
EAR99

StrongIRFET™ Power MOSFETs

Infineon StrongIRFET™ Power MOSFET family is optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current-carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 

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