IXFX120N30T

IXYS Logo
747-IXFX120N30T

IXFX120N30T

Mfr.:

Description:
MOSFET 120V 300V

ECAD Model:
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In Stock: 28

Stock:

28 Can Ship Immediately

Factory Lead-Time:

53 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $15.75 $15.75
10 $14.47 $144.70
30 $13.87 $416.10
120 $12.22 $1,466.40
510 $10.87 $5,543.70
1,020 $9.88 $10,077.60
2,520 Quote
Product Attribute Attribute Value
IXYS
Product Category: MOSFET
RoHS:  Details
Si
Through Hole
TO-247-3
N-Channel
1 Channel
300 V
120 A
24 mOhms
- 20 V, + 20 V
5 V
265 nC
- 55 C
+ 150 C
960 W
Enhancement
HiPerFET
IXFX120N30
Tube
Brand: IXYS
Configuration: Single
Fall Time: 23 ns
Forward Transconductance - Min: 70 S
Height: 21.34 mm
Length: 16.13 mm
Product Type: MOSFET
Rise Time: 31 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: GigaMOS Power MOSFET
Typical Turn-Off Delay Time: 87 ns
Typical Turn-On Delay Time: 32 ns
Width: 5.21 mm
Unit Weight: 0.211644 oz

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USHTS:
8541290095
CNHTS:
8541290000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541500000
MXHTS:
85415001
ECCN:
EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

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