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IXFX120N30T

Name: IXYS IXFX120N30T
Brand: IXYS
SKU: 747-IXFX120N30T
Price: 14.72 USD
Availability: OutOfStock

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Mouser #:

747-IXFX120N30T

Mfr. #:

IXFX120N30T

Mfr.:

IXYS

Description:

MOSFET 120V 300V

Datasheet:

IXFX120N30T Datasheet (PDF)

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Learn more about IXYS IXFX120N30T

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Stock:: 0

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Shipping Restricted
On Order:: 30

Expected 30-Sep-22
Factory Lead-Time:: 70

Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$14.72	$14.72
10	$13.53	$135.30
30	$12.97	$389.10
120	$11.42	$1,370.40
510	$10.16	$5,181.60
1,020	$9.24	$9,424.80
2,520	Quote

Specifications

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Product Attribute	Attribute Value	Search Similar
Manufacturer:	IXYS
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	265 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	960 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	23 ns
Forward Transconductance - Min:	70 S
Height:	21.34 mm
Length:	16.13 mm
Product Type:	MOSFET
Rise Time:	31 ns
Series:	IXFX120N30
Factory Pack Quantity:	30
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Type:	GigaMOS Power MOSFET
Typical Turn-Off Delay Time:	87 ns
Typical Turn-On Delay Time:	32 ns
Width:	5.21 mm
Unit Weight:	0.211644 oz

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Datasheet

IXFX120N30T Datasheet (PDF)

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
CAHTS:: 8541290000
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

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