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GA08JT17-247

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905-GA08JT17-247

GA08JT17-247

Mfr.:

Description:
JFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A

Lifecycle:
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

ECAD Model:
GA08JT17-247 ECAD Model
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Availability

Stock:

Not Available
Product Attribute Attribute Value
GeneSiC Semiconductor
JFET
RoHS:  Details
SiC
Through Hole
TO-247-3
N-Channel
Single
1700 V
8 A
230 mO
91 W
- 55 C
+ 175 C
SiC Junction Transistor
Tube
Brand: GeneSiC Semiconductor
Product Type: JFETs
Factory Pack Quantity: 30
Subcategory: Transistors
Unit Weight: 0.215171 oz
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USHTS:
8541290095
CNHTS:
8541100000
CAHTS:
8541290000
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

GeneSiC Silicon Carbide Super Junction Transistors

GeneSiC Semiconductor's Silicon Carbide Super Junction Transistors are a new innovative power device, which are "Super-High" current gain SiC BJTs with up to 1700 V ratings. The SJTs are gate-oxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operation area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The SJT is a current controlled device which requires a small gate current that can be driven by commercial, commonly available gate drivers. Incorporating high voltage, high frequency and high-temperature capable SiC SJTs will increase conversion efficiency and reduce the size/weight/volume of power electronics.
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