G3R350MT12J

GeneSiC Semiconductor Logo
905-G3R350MT12J

G3R350MT12J

Mfr.:

Description:
MOSFET 1200V 350mO TO-263-7 G3R SiC MOSFET

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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In Stock: 3,625

Stock:

3,625 Can Ship Immediately

Factory Lead-Time:

3 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $6.06 $6.06
10 $5.41 $54.10
25 $5.17 $129.25
100 $4.82 $482.00
250 $4.60 $1,150.00
500 $4.45 $2,225.00
1,000 $4.40 $4,400.00
Product Attribute Attribute Value
GeneSiC Semiconductor
MOSFET
RoHS:  Details
SiC
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
10 A
350 mOhms
- 5 V, + 15 V
2.7 V
10 nC
- 55 C
+ 175 C
64 W
Enhancement
Tube
Brand: GeneSiC Semiconductor
Configuration: Single
Fall Time: 2 ns
Forward Transconductance - Min: 1.8 S
Product: MOSFET
Product Type: MOSFET
Rise Time: 5 ns
Series: G3R
Factory Pack Quantity: 50
Subcategory: MOSFETs
Transistor Type: MOSFET
Type: SiC MOSFET
Typical Turn-Off Delay Time: 6 ns
Typical Turn-On Delay Time: 6 ns
Unit Weight: 0.056438 oz

USHTS:
8541290095
CNHTS:
8541290000
TARIC:
8541290000
ECCN:
EAR99

SiC MOSFETs

GeneSiC Semiconductor’s next-generation G3R™ and G2R™ SiC (Silicon Carbide) MOSFETs offer RDS(ON) levels ranging from 12mΩ to 1000mΩ. These devices feature industry-leading performance, robustness, and quality for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver high efficiency, fast switching frequency, an increased power density, reduced ringing (EMI), and compact size. The G3R and G2R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). These devices are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with very low losses.

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