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G3R20MT12K

Name: GeneSiC Semiconductor G3R20MT12K
Brand: GeneSiC Semiconductor
SKU: 905-G3R20MT12K
Price: 39.69 USD
Availability: OutOfStock

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Mouser #:

905-G3R20MT12K

Mfr. #:

G3R20MT12K

Description:

MOSFET 1200V 20mO TO-247-4 G3R SiC MOSFET

Datasheet:

G3R20MT12K Datasheet (PDF)

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On Order:: 560

Expected 16-Oct-23
Factory Lead-Time:: 29

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$39.69	$39.69
	$36.50	$365.00
	$35.30	$1,059.00
	$34.30	$4,116.00

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	GeneSiC Semiconductor
Product Category:	MOSFET
RoHS:	Details
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	180 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	389 W
Channel Mode:	Enhancement
Series:	G3R
Packaging:	Tube
Brand:	GeneSiC Semiconductor
Configuration:	Single
Fall Time:	20 ns
Forward Transconductance - Min:	29.2 S
Product:	MOSFETs
Product Type:	MOSFET
Rise Time:	37 ns
Factory Pack Quantity:	30
Subcategory:	MOSFETs
Transistor Type:	MOSFET
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	47 ns
Unit Weight:	0.211644 oz

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Product Compliance

USHTS:: 8541290095
CNHTS:: 8541290000
TARIC:: 8541290000
ECCN:: EAR99

GeneSiC Semiconductor’s next-generation G3R™ and G2R™ SiC (Silicon Carbide) MOSFETs offer R_DS(ON) levels ranging from 12mΩ to 1000mΩ. These devices feature industry-leading performance, robustness, and quality for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver high efficiency, fast switching frequency, an increased power density, reduced ringing (EMI), and compact size. The G3R and G2R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). These devices are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with very low losses.

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