G3R12MT12K

GeneSiC Semiconductor Logo
905-G3R12MT12K

G3R12MT12K

Mfr.:

Description:
MOSFET 1200V 12mO TO-247-4 G3R SiC MOSFET

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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Availability

Stock:

0
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On Order:

863
263
Pending
600
Expected 30-May-23

Factory Lead-Time:

32
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
 
Minimum: 1   Multiples: 1

$-.--
$-.--

Pricing (USD)

Qty. Unit Price
Ext. Price
1 $71.79 $71.79
10 $68.21 $682.10
30 $66.41 $1,992.30
Product Attribute Attribute Value
GeneSiC Semiconductor
Product Category: MOSFET
RoHS:  Details
SiC
SMD/SMT
N-Channel
1 Channel
1.2 kV
111 A
12 mOhms
- 10 V, + 22 V
2.7 V
288 nC
- 55 C
+ 175 C
567 W
Enhancement
Brand: GeneSiC Semiconductor
Product: MOSFET
Product Type: MOSFET
Factory Pack Quantity: 30
Subcategory: MOSFETs

USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

SiC MOSFETs

GeneSiC Semiconductor’s next-generation G3R™ and G2R™ SiC (Silicon Carbide) MOSFETs offer RDS(ON) levels ranging from 12mΩ to 1000mΩ. These devices feature industry-leading performance, robustness, and quality for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver high efficiency, fast switching frequency, an increased power density, reduced ringing (EMI), and compact size. The G3R and G2R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). These devices are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with very low losses.

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