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DMTH8001STLWQ-13

Name: Diodes Incorporated DMTH8001STLWQ-13
Brand: Diodes Incorporated
SKU: 621-DMTH8001STLWQ-13
Price: 5.52 USD
Availability: InStock

Mouser #:

621-DMTH8001STLWQ-13

Mfr. #:

DMTH8001STLWQ-13

Description:

MOSFET MOSFET BVDSS: 61V 100V PowerDI1012-8 T&R 1.5K

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

DMTH8001STLWQ-13 Datasheet (PDF)

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In Stock: 350

Stock:: 350

Can Ship Immediately

Shipping Restricted
On Order:: 1,500

Expected 03-Mar-23

500

TBD
Factory Lead-Time:: 28

Weeks Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

Enter Quantity:

Unit Price:

$-.--

Ext. Price:

$-.--

Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$5.52	$5.52
10	$4.96	$49.60
100	$4.06	$406.00
500	$3.46	$1,730.00
1,000	$2.92	$2,920.00
Full Reel (Order in multiples of 1500)
1,500	$2.77	$4,155.00
3,000	$2.66	$7,980.00
9,000	Quote

Specifications

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	270 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	138 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Product:	MOSFET
Product Type:	MOSFET
Factory Pack Quantity:	1500
Subcategory:	MOSFETs

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Attributes selected: 0

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Datasheet

DMTH8001STLWQ-13 Datasheet (PDF)

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Product Compliance

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

Diodes Incorporated DMTH8001STLW Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.1mΩ typical, 1.7mΩ maximum_⁾ and superior switching performance. The DMTH8001STLW has an 80V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.

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