BIDW30N60T

Bourns
652-BIDW30N60T

BIDW30N60T

Mfr.:

Description:
IGBT Transistors IGBT Discrete 600V, 30A in TO-247

Lifecycle:
New Product: New from this manufacturer.
ECAD Model:
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In Stock: 3,915

Stock:

3,915 Can Ship Immediately

Factory Lead-Time:

18 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$4.15 $4.15
$3.49 $34.90
$3.38 $84.50
$2.82 $282.00
$2.51 $627.50
$2.15 $1,290.00
$2.02 $2,424.00
$2.01 $6,030.00
$1.93 $10,422.00
Product Attribute Attribute Value
Bourns
Product Category: IGBT Transistors
RoHS:  Details
Si
TO-247-3
Through Hole
Single
600 V
1.65 V
- 20 V, 20 V
60 A
230 W
- 55 C
+ 150 C
BID
Tube
Brand: Bourns
Continuous Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs

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USHTS:
8541290095
CAHTS:
8541290000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

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