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AP54RHC504ELT-R

Name: Apogee Semiconductor AP54RHC504ELT-R
Brand: Apogee Semiconductor
SKU: 444-AP54RHC504ELT-R
Price: 56.1 USD
Availability: InStock

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Mouser #:

444-AP54RHC504ELT-R

Mfr. #:

AP54RHC504ELT-R

Description:

Translation - Voltage Levels 5-Channel level translator, Rad-Hard

Lifecycle:

New Product: New from this manufacturer.

Datasheet:

AP54RHC504ELT-R Datasheet (PDF)

ECAD Model:

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In Stock: 94

Stock:: 94

Can Ship Immediately

Shipping Restricted
On Order:: 250
Factory Lead-Time:: 1

Week Estimated factory production time for quantities greater than shown.

Minimum: 1 Multiples: 1

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
1	$56.10	$56.10
5	$46.75	$233.75
25	$42.50	$1,062.50
100	$38.25	$3,825.00

Specifications

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Product Attribute	Attribute Value	Search Similar
Manufacturer:	Apogee Semiconductor
Product Category:	Translation - Voltage Levels
RoHS:	Details
Type:	Logic Level Shifter
Propagation Delay Time:	25 ns
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	1.65 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package / Case:	TSSOP-14
Series:	AP54RHC
Brand:	Apogee Semiconductor
High Level Output Current:	- 24 mA
Logic Family:	54
Logic Type:	CMOS
Low Level Output Current:	24 mA
Number of Channels:	5 Channel
Operating Supply Current:	100 mA
Operating Temperature Range:	- 55 C to + 125 C
Product Type:	Translation - Voltage Levels
Factory Pack Quantity:	250
Subcategory:	Logic ICs
Unit Weight:	0.001658 oz

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Documents (4)

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Datasheet

AP54RHC504ELT-R Datasheet (PDF)

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Product Compliance

USHTS:: 8542390001
TARIC:: 8542399000
ECCN:: EAR99

Apogee Semiconductor AP54RHC504 Rad-Hard 5-Channel Level Translators are radiation-hardened by design and feature cold sparing and 3-state outputs. The AP54RHC504 is designed for space, medical imaging, and other applications demanding radiation tolerance and high reliability. The Level Translators are fabricated in a 180nm CMOS process utilizing proprietary radiation-hardening techniques, allowing high resiliency to single-event effects (SEE) and to a total ionizing dose (TID) up to 30krad (Si).

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