C4D02120A

Wolfspeed
941-C4D02120A

C4D02120A

Mfr.:

Description:
Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A

Datasheet:

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In Stock: 4,440

Stock:

4,440 Can Ship Immediately

Factory Lead-Time:

78 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

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Pricing (USD)

Qty. Unit Price
Ext. Price
$2.29 $2.29
$2.10 $21.00
$1.83 $183.00
$1.82 $455.00
$1.55 $775.00
$1.41 $1,410.00
10,000 Quote
Product Attribute Attribute Value
Wolfspeed
Product Category: Schottky Diodes & Rectifiers
RoHS:  Details
Schottky Silicon Carbide Diodes
Through Hole
TO-220-2
Single
SiC
2 A
1.2 kV
1.8 V
19 A
50 uA
- 55 C
+ 175 C
Tube
Brand: Wolfspeed
Pd - Power Dissipation: 40.5 W
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Type: -
Unit Weight: 0.067021 oz
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USHTS:
8541100080
CNHTS:
8541100000
CAHTS:
8541400010
JPHTS:
8541400103
TARIC:
8541401000
BRHTS:
85414011
ECCN:
EAR99

Z-Rec Zero Recovery SiC Diodes

Wolfspeed Z-Rec™ Zero Recovery Silicon Carbide Schottky Diodes are 1200V, 650V, or 600V Schottky rectifiers with a zero reverse recovery current. With high-frequency operation and temperature-independent switching behavior, Wolfspeed Z-Rec Zero Recovery Rectifiers provide extremely fast switching with virtually no switching losses, as well as the ability to parallel devices without thermal runaway, reducing heat sink requirements. The unipolar diodes can replace bipolar rectifiers and are useful in switch-mode power supplies, power factor correction, and motor drives.

Silicon Carbide (SiC) Schottky Diodes

Wolfspeed Silicon Carbide (SiC) Schottky Diodes are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, industrial power supplies, and consumer electronics. Compared to silicon-based solutions, Wolfspeed Silicon Carbide technology enables increased system power density, higher switching frequencies, smaller designs, cooler components, reduced size of components like inductors, capacitors, filters, and transformers, and overall cost benefits. Wolfspeed SiC diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for use in high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as they offer a 15V gate drive. The 1200V SiC MOSFETs provide improved system-level efficiency with lower switching and conduction losses and improved system-level power density. Increased linear COSS behavior can also enhance performance for soft switching applications.

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